Abstract
Strain-engineered growth of 2D materials on deterministically patterned grayscale topographies
Semiconductor innovation, which has historically relied on dimensional scaling, is now advancing through new 3D architectures and materials such as 2D semiconductors. Integration of 2D materials typically involves synthesis on a growth substrate followed by polymer-assisted transfer to a target substrate. While most research focuses on improving growth quality by reducing intrinsic defects, the transfer process undermines these improvements through extrinsic defects and contamination. In this talk, I will present a new approach where strain in 2D materials is already introduced directly during their growth on grayscale-patterned nanosurfaces. This technique eliminates all transfer-related limitations of previous approaches, thus paving the way for integrating strained 2D materials into next-generation nanoelectronics.
Biography
Berke Erbas obtained his BSc degree in Mechanical Engineering in 2019 from Istanbul Technical University, his MSc degree in Microengineering in 2021, and his PhD degree in Microsystems and Microelectronics from EPFL. His PhD thesis innovates transistor architecture with 3D nanopatterns to enhance the mobilities of emerging 2D material transistors toward industry performance targets. He is currently a postdoctoral researcher at EPFL focusing on high-resolution grayscale nanopatterning.