Dr. Huamin Li

Fabrication and Interfacial Engineering of 2D Nanoelectronics

Since the discovery of graphene in 2004, two-dimensional (2D) materials have attracted significant attention for energy-efficient nanoelectronics due to their unique charge transport characteristics, which differ fundamentally from those of conventional three-dimensional (3D) bulk materials. However, practical implementation through compatible fabrication process remains challenging. From the perspective of interfacial engineering, we use semiconducting MoS2 and WSe2 as examples to highlight recent advances spanning material synthesis, structural engineering, and device innovation. First, functionalizing the growth substrate enables transfer-free, location- and crystallinity-on-demand chemical vapor deposition (CVD) of MoS2 with room-temperature electron mobility up to 20 cm2/V·s. Second, thermal expansion mismatch at the MoS2/SiO2 interface induces interfacial tension, leading to in-plane artificial transport anisotropy and spontaneous nanoscroll formation. Third, controlled O2 plasma treatment provides distinct impact on MoS2 and WSe2, leading to an evolution of energy band structure and novel anti-ambipolar devices. These fabrication and interfacial engineering strategies provide viable pathways for next-generation, low-power electronic devices.